| 摘要 |
PURPOSE: To improve element characteristics and to reduce cost by optimizing the structure of a clad layer. CONSTITUTION: N-type GaAs buffer layer 102, Bragg reflection film 108 where AlGaAs/AlAs are alternately laminated by 15 layers, n-type Al0.7 Ga0.3 As first clad layer 103 (Thickness: 1.0μm), and n-type (Al0.2 Ga0.3 )0.5 In0.5 P second clad layer 104 (Thickness: 0.5μm or less) are grown on a substrate 101. Then, an active layer 105 (Al0.2 Ga0.8 )0.5 In0.5 P (Thickness: 0.3μm), P-type (Al0.7 Ga0.3 )0.5 In0.5 P third clad layer 106 (Thickness: 0.2μm), P-type Al0.7 Ga0.3 As Fourth clad + light read-out layer 107 (Thickness: 10μm), and P-type GaAs cap layer 109 (Thickness: 2μm) are successively grown, thus optimizing the structure of a clad layer (Thickness: 0.5μm or less) holding AlGaInP or GaInP. |
