Non-volatile semiconductor memory device and controlling method of the same

摘要

This invention largely reduces a data writing time of a non-volatile semiconductor memory device. A memory array is split into a first memory cell array to be programmed with normal data in its memory cells and a second memory cell array to be programmed with inverted data of the normal data in its memory cells. A column decoder selects a bit line connected with the memory cell written with the normal data and a bit line connected with the memory cell written with the inverted data simultaneously. A differential amplifier amplifies a difference between signals outputted to the pair of these bit lines and outputs it to an I/O line.