发明名称 |
Method of making a nanoscale electronic device |
摘要 |
The present invention relates to a method of making a nanoscale electronic device wherein said device comprises a gap between about 0.1 nm and about 100 nm between at least two conductors, semiconductors or the combination thereof. The method features complete assembly of electrical contacts before addition of a molecular component thereby preserving the integrity of the molecular electronic component and maintaining a well-formed gap. The gap produced is within the nanoscale regime, has uniform width and is further characterized by surfaces that are uniformly smooth.
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申请公布号 |
US6946336(B2) |
申请公布日期 |
2005.09.20 |
申请号 |
US20030436704 |
申请日期 |
2003.05.13 |
申请人 |
WILLIAM MARSH RICE UNIVERSITY |
发明人 |
PANG HARRY F.;TOUR JAMES M. |
分类号 |
B82B;H01L21/28;H01L21/336;H01L21/44;H01L21/8238;H01L51/00;(IPC1-7):H01L21/823 |
主分类号 |
B82B |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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