发明名称 |
Method for forming trench capacitor |
摘要 |
A method for forming a trench capacitor. A semiconductor substrate with a trench is provided, and a trench capacitor is formed in the trench with a storage node and a node dielectric layer. The top portion of the trench is ion implanted to a predetermined angle to form an ion doped area on a sidewall of the top portion of the trench and a top surface of the trench capacitor. The ion doped area is oxidized to form an oxide layer. A sidewall semiconductor layer is formed on another sidewall using the oxide layer as a mask, and then the oxide layer is removed. A barrier layer is conformally formed on the surface of the trench, and the trench is filled with a conducting layer.
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申请公布号 |
US6946344(B2) |
申请公布日期 |
2005.09.20 |
申请号 |
US20030620743 |
申请日期 |
2003.07.16 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
CHOU SHIH-CHUNG;CHEN YI-NAN;TSAI TZU-CHING |
分类号 |
H01L21/00;H01L21/20;H01L21/8242;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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