| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a copper-based polishing liquid, by which copper or copper alloy is hardly etched in dipping and is dissolved at the time of polishing treatment with the etching rate difference which is several to several tens of times the rate in the dipping state. <P>SOLUTION: The copper-based polishing liquid contains amidosulfuric acid, oxidizing agent, and water. The polishing liquid forms an oxidizing layer which functions as an etching barrier on the surface of the copper or copper alloy by oxidative action of the oxidizing agent, in the dipping state of the copper or copper alloy, the oxidizing layer is removed mechanically at the time of the polishing, and the exposed copper or copper alloy is etched by the organic acid. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
