USE OF A METAL COMPLEX AS N-DOPANT FOR AN ORGANIC SEMICONDUCTING MATRIX MATERIAL, ORGANIC SEMICONDUCTOR MATERIAL AND ELECTRONIC COMPONENT, AS WELL AS DOPANT AND LIGAND AND METHOD FOR PRODUCING THE SAME

摘要

The invention relates to the use of a metal complex as n-dopant for doping an organic semiconducting matrix material for modifying the electrical properties of the same, wherein the compound represents an n-dopant with regard to the matrix material. The aim of the invention is to provide n-doped organic semiconductors for matrix materials that have little reduction potential while achieving high conductivities. According to the invention, a neutral electron-rich metal complex having a central atom as the preferably neutral or charged transition metal atom having a valence electron number of at least 16 is used as the dopant compound. The complex can especially be multinuclear and comprises at least one metal-metal bond. At least one ligand can form a Pi complex with the central atom, or can be a bridging ligand, especially hpp, a borate, carborane or triazacycloalkane or comprise at least one carbanion carbon atom or a bivalent atom selected from the group including C (carbene), Si (silylene), Ge (germylene), Sn, Pb. The invention also relates to novel n-dopants and methods for producing them.