| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that is superior in reliability and productivity, and also provide its manufacturing method, a circuit substrate, and electronic equipment. SOLUTION: The manufacturing method of the semiconductor device includes a first process that intervenes a thermosetting anisotropic conductive material between a substrate 12 and a semiconductor element 20; a second process that applies pressure and heat to between the semiconductor element 20 and the substrate 12 to electrically connect the wiring pattern 10 and the electrode 22, and to harden the anisotropic conductive material 16 at the region contacting to the semiconductor element 20 with the anisotropic conductive material 16 being protruded; and a third process that heats the anisotropic conductive material 16 except the region contacting to the semiconductor element 20. COPYRIGHT: (C)2005,JPO&NCIPI
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