发明名称 |
Method for shrinking a dimension of a gate |
摘要 |
A method for shrinking a dimension of a gate is provided that utilizes a thermal oxidation to form an oxide layer on a semiconductor substrate and a gate. Controlling the thickness of the oxide layer on the gate will control the channel length of a gate. The oxide layer on the gate is stripped by a suitable etching solution and then shrinkage of the dimension of the gate is achieved. That is, an ability of a photolithography is overcome, moreover; shrinking the dimension of the gate to reach an advanced process by the most economical method.
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申请公布号 |
US2005202680(A1) |
申请公布日期 |
2005.09.15 |
申请号 |
US20040799687 |
申请日期 |
2004.03.15 |
申请人 |
YEH YAO-CHIA;CHUANG HSIAO-WEN;TU CHIEN-NAN;TUNG HSUAN-SHENG |
发明人 |
YEH YAO-CHIA;CHUANG HSIAO-WEN;TU CHIEN-NAN;TUNG HSUAN-SHENG |
分类号 |
H01L21/336;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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地址 |
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