| 发明名称 |
Formation of ultra-shallow junctions by gas-cluster ion irradiation |
| 摘要 |
Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams.
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| 申请公布号 |
US2005202657(A1) |
申请公布日期 |
2005.09.15 |
| 申请号 |
US20050080800 |
申请日期 |
2005.03.11 |
| 申请人 |
EPION CORPORATION |
发明人 |
BORLAND JOHN O.;HAUTALA JOHN J.;SKINNER WESLEY J. |
| 分类号 |
H01L21/425;(IPC1-7):H01L21/425 |
主分类号 |
H01L21/425 |
| 代理机构 |
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