| 摘要 |
A drain diffusion layer 11 b includes a low impurity concentration region 5 a and a high impurity concentration region 5 b, and the low impurity concentration region 5 a is located on the channel region side. An impurity layer 7 having an opposite conductivity type to the drain diffusion layer 11 b is formed in the channel region, at a position away from the low impurity concentration region 5 a by a distance T. Alternatively, the low impurity concentration region 5 a and the impurity layer 7 are located so as to contact each other. Still alternatively, a border impurity layer is provided between the low impurity concentration region 5 a and the impurity layer 7 . Thus, a semiconductor device including a high voltage transistor capable of suppressing the reduction of the electric current driving capability and performing stable driving, and a method for fabricating the same, can be provided.
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