METHOD FOR REVEALING DISLOCATIONS EMERGING IN A CRYSTALLINE MATERIAL
摘要
<p>The invention relates to a method for revealing dislocations emerging in a surface layer made of crystalline material of a substrate by etching this surface layer. The crystalline material of the surface layer consists of Si1-xGex in which 0 = x = 1, and the etching is effected by means of a gas that etches said crystalline material.</p>
申请公布号
WO2005086222(A1)
申请公布日期
2005.09.15
申请号
WO2005FR50134
申请日期
2005.03.01
申请人
COMMISSARIAT A L'ENERGIE ATOMIQUE;BOGUMILOWICZ, YANN;HARTMANN, JEAN-MICHEL;CAMPIDELLI, YVES
