发明名称 |
BORON PHOSPHIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE |
摘要 |
<p>A boron phosphide-based semiconductor light-emitting device includes a substrate of silicon single crystal, a first cubic boron phosphide-based semiconductor layer that is provided on a surface of the substrate and contains twins, a light-emitting layer that is composed of a hexagonal Group III nitride semiconductor and provided on the first cubic boron phosphide-based semiconductor layer and a second cubic boron phosphide-based semiconductor layer that is provided on the light-emitting layer, contains twins and has a conduction type different from that of the first cubic boron phosphide-based semiconductor layer.</p> |
申请公布号 |
WO2005086240(A1) |
申请公布日期 |
2005.09.15 |
申请号 |
WO2005JP04020 |
申请日期 |
2005.03.02 |
申请人 |
SHOWA DENKO K.K.;UDAGAWA, TAKASHI |
发明人 |
UDAGAWA, TAKASHI |
分类号 |
H01L21/205;H01L33/16;H01L33/32;(IPC1-7):H01L33/00 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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