| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce damages given to a front surface of an electrode pad, a wiring of a lower layer and an interlayer insulating film in the case of bonding or probing. <P>SOLUTION: In this semiconductor device, a pad section serving as an electrode for an external connection comprises: a first pad metal layer 61 formed in a top layer; a second pad metal layer 62 formed under the first pad metal layer 61 at both sides of an interlayer insulating film 71; and vias 63 which penetrate the interlayer insulating film 71 and electrically connect the first and second pad metal layers 61, 62. The first and second pad metal layers 61, 62 are arranged to be mutually shifted so that edges of the first and second pad metal layers 61, 62 may not be aligned along a thickness direction of each layer. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
