| 摘要 |
PROBLEM TO BE SOLVED: To analyze various metal elements existing on a wafer surface with high sensitivity. SOLUTION: A high-concentration HF solution is dropped onto the wafer surface (S101). A natural oxidation film on the wafer surface is dissolved by the dropped HF solution while the metal elements or their compounds existing near the wafer surface are removed from the wafer and caused to exist in the HF solution (S102). Liquid drops into which the HF solution has gathered are collected at a prescribed position on the wafer surface (S103). The collected liquid drops of the HF solution are dried (S104). X rays are irradiated to a flocculate thus obtained at an angle causing them to be totally reflected, and the radiated X rays are detected to perform total reflection fluorescent X-ray analysis (S105). COPYRIGHT: (C)2005,JPO&NCIPI |
