Mask manufacturing method for semiconductor component, involves enlarging slivers after breaking up of semiconductor layout data, and transmitting enlarged slivers to generator in form of control data after photographic exposure of mask

摘要

The method involves fixing a structure on a substrate during a photolithographic process. Semiconductor layout data is broken up in the form of control data. Slivers (3) are localized and are enlarged by data processing technology after breaking up of the layout data. The enlarged slivers are transmitted to a pattern generator in the form of another control data after a photographic exposure of a mask caused by the generator.