发明名称 |
Process for creating metal-insulator-metal devices |
摘要 |
A process is described for fabricating an active addressing component such as a metal-insulator-metal (MIM) device by creating surface relief levels to form trenches, and depositing a metal in the trenches. The metal is anodized to create a non-linear dielectric. A second metal is deposited in the trenches to create an electrical with the dielectric which a contact is provided, and transferring the MIM device to a substrate by adhesive transfer.
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申请公布号 |
US2005202647(A1) |
申请公布日期 |
2005.09.15 |
申请号 |
US20050122910 |
申请日期 |
2005.05.05 |
申请人 |
WENG JIAN-GANG;MARDILOVICH PETER;RUDIN JOHN C.;GEISOW ADRIAN |
发明人 |
WENG JIAN-GANG;MARDILOVICH PETER;RUDIN JOHN C.;GEISOW ADRIAN |
分类号 |
G02F1/1343;G02F1/1365;H01L21/00;H01L21/20;H01L45/00;(IPC1-7):H01L21/20 |
主分类号 |
G02F1/1343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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