| 摘要 |
<P>PROBLEM TO BE SOLVED: To correctly determine the termination time of polishing whose finishing thickness of a wafer coincides with a target thickness, in a wafer polishing method which carries out the simultaneous polishing of both sides of a semiconductor wafer using a carrier between upper and lower surface plates. <P>SOLUTION: Out of frequencies of surface plate vibration generated accompanied by the polishing of a wafer, one or a plurality of specific frequencies at which a level changes reflecting the progress degree of the polishing are selected beforehand. The vibration level of the surface plate is detected during the polishing, and the termination time of the polishing is presumed from the level variation of the specific frequency. Thickness control is performed by using a carrier, so that its thickness may be equal to the finishing target thickness of the wafer, or slightly thinner than the same. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
