| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein the transistors different in capabilities are formed on the same semiconductor layer without controlling of gate length or gate width, and its manufacturing method. SOLUTION: The semiconductor device comprises a semiconductor layer 10, a first MIS transistor 100A provided in the semiconductor layer 10, and an second MIS transistor 100B provided in the semiconductor layer 10. The first and second MIS transistors 100A, B are equipped with a gate insulating layer 20 provided above the semiconductor layer 10, a gate electrode 22 provided above the gate insulating layer 20, and source region or drain areas 30, 26 provided in the semiconductor layer. The source region or drain area 30 of the first MIS transistor 100A at least consists of a compound of the semiconductor layer 10 and metal. COPYRIGHT: (C)2005,JPO&NCIPI
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