| 摘要 |
A giant magneto-resistive effect element includes a lamination layer structure portion ( 10 ) in which at least a free layer ( 4 ) the magnetization of which is rotated in response to an external magnetic field, a fixed layer ( 2 ), an antiferromagnetic layer ( 1 ) for fixing the magnetization of the fixed layer ( 2 ) and a nonmagnetic layer ( 3 ) interposed between the free layer ( 4 ) and the fixed layer ( 2 ) are laminated with each other. A sense current flows to substantially a lamination layer direction of the lamination layer structure portion ( 10 ) and the lamination layer structure portion ( 10 ) has disposed thereon a high-resistance layer (R) which crosses a path of the sense current, whereby an element resistance can be increased and a magneto-resistance change amount can be increased. Thus, a magneto-resistive effect element, a magneto-resistive effect type magnetic sensor, a magneto-resistive effect type magnetic head and a magnetic memory become able to increase a magneto-resistive change amount.
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