| 摘要 |
A non-volatile memory in which a plurality of memory cells connected to a same word line are entirely written with data. Source lines SL separated from each other in column units is arranged on each memory cell (10) of a memory cell array (20). When writing data, one of either a first or a second source voltage is applied to each source line (SL) in accordance with data that is to be written. After a first control voltage of negative voltage is applied, a second control voltage of high voltage is applied to the word line (CWL) with the voltage of each source line SL in a maintained state. Therefore, each memory cell (10) is erased or programmed in accordance with the voltage applied to the respective source line (SL). <IMAGE>
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