发明名称 Magnetic random access memory
摘要 Blocks are connected to a read bit line. One block has MTJ elements which are connected to each other in series between the read bit line and a ground terminal. A MTJ elements are superposed on, e.g., a semiconductor substrate. A read bit line is arranged on the superposed MTJ elements. A write word line extending in a X-direction and a write bit line extending in a Y-direction are arranged in the vicinity of the MTJ elements in the block.
申请公布号 US6944048(B2) 申请公布日期 2005.09.13
申请号 US20020160184 申请日期 2002.06.04
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 IWATA YOSHIHISA
分类号 G11C11/15;(IPC1-7):G11C11/00 主分类号 G11C11/15
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