发明名称 Tunnel magnetoresistive effective element, and a thin film magnetic head, a magnetic head device and a magnetic disk drive device using same
摘要 A tunnel magnetoresistive effective element has a ferromagnetic tunnel effective film with a free layer, a pinned layer and a tunnel barrier layer sandwiched between the free layer and the pinned layer, a magnetic bias means, a first conductive layer, and a second conductive layer. The magnetic bias means apply a bias magnetic field to the free layer of the ferromagnetic tunnel effective film. The first conductive layer and the second conductive layer generate magnetic fields having the same direction as that of the bias magnetic field through a sense current therein to reinforce the bias magnetic field.
申请公布号 US6943998(B2) 申请公布日期 2005.09.13
申请号 US20010824060 申请日期 2001.04.03
申请人 TDK CORPORATION 发明人 SHIMAZAWA KOJI;UMEHARA TSUYOSHI;ARAKI SATORU
分类号 G11B5/31;G11B5/012;G11B5/39;H01F10/32;H01L43/08;(IPC1-7):G11B5/127 主分类号 G11B5/31
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