发明名称 CHEMICAL VAPOR DEPOSITION OF HIGH CONDUCTIVITY, ADHERENT THIN FILMS OF RUTHENIUM
摘要 A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.
申请公布号 WO2005081933(A2) 申请公布日期 2005.09.09
申请号 WO2005US05609 申请日期 2005.02.23
申请人 ADVANCED TECHNOLOGY MATERIALS, INC.;HENDRIX, BRYAN, C.;WELCH, JAMES, J.;BILODEAU, STEVEN, M.;ROEDER, JEFFREY, F.;XU, CHONGYING;BAUM, THOMAS, H. 发明人 HENDRIX, BRYAN, C.;WELCH, JAMES, J.;BILODEAU, STEVEN, M.;ROEDER, JEFFREY, F.;XU, CHONGYING;BAUM, THOMAS, H.
分类号 C23C16/00;C23C16/02;C23C16/16;C23C16/18;C23C16/44;C23C16/455 主分类号 C23C16/00
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