发明名称 MULTI-LAYER MEMORY ARRAYS
摘要 <p>Multi-layer memory arrays and methods are provided. A memory array has two or more layers of memory material, each layer of memory material having an array of memory cells. A first contact penetrates through each layer of memory material in a first plane and is electrically connected to each layer of memory material so as to electrically interconnect the layers of memory material in the first plane. A second contact penetrates through at least one of the layers of memory material in a second plane substantially perpendicular to the first plane.</p>
申请公布号 WO2005083715(A1) 申请公布日期 2005.09.09
申请号 WO2005US05779 申请日期 2005.02.24
申请人 MICRON TECHNOLOGY, INC.;PRALL, KIRK, D. 发明人 PRALL, KIRK, D.
分类号 G11C11/16;G11C5/02;G11C16/04;(IPC1-7):G11C16/04 主分类号 G11C11/16
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