发明名称 |
MULTI-LAYER MEMORY ARRAYS |
摘要 |
<p>Multi-layer memory arrays and methods are provided. A memory array has two or more layers of memory material, each layer of memory material having an array of memory cells. A first contact penetrates through each layer of memory material in a first plane and is electrically connected to each layer of memory material so as to electrically interconnect the layers of memory material in the first plane. A second contact penetrates through at least one of the layers of memory material in a second plane substantially perpendicular to the first plane.</p> |
申请公布号 |
WO2005083715(A1) |
申请公布日期 |
2005.09.09 |
申请号 |
WO2005US05779 |
申请日期 |
2005.02.24 |
申请人 |
MICRON TECHNOLOGY, INC.;PRALL, KIRK, D. |
发明人 |
PRALL, KIRK, D. |
分类号 |
G11C11/16;G11C5/02;G11C16/04;(IPC1-7):G11C16/04 |
主分类号 |
G11C11/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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