| 摘要 |
A nitride-based field effect transistor includes a substrate, a channel laye r comprising InAlGaN formed on the substrate, source and drain ohmic contacts in electrical communication with the channel layer, and a gate contact formed o n the channel layer. At least one energy barrier opposes movement of carriers away from the channel layer. The energy barrier may comprise an electron source layer in proximity with a hole source layer which generate an associated electric field directed away from the channel. An energy barrier according to some embodiments may provide a built-in potential barrier in excess of about 0.5 eV. Method embodiments are also disclosed.
|
