COMPOUND SEMICONDUCTOR SINGLE CRYSTAL MANUFACTURING METHOD AND ZnTe SINGLE CRYSTAL

摘要

A method for manufacturing a compound semiconductor single crystal is provided so as to grow a (110) oriented compound semiconductor single crystal having an excellent crystal quality. In a compound semiconductor single crystal manufacturing method employing a liquid encapsulation Czochralski method, a material melt container composed of a bottomed cylinder-shaped first crucible and a second crucible, which is arranged on the inner side of the first crucible and has holes for communicating with the first crucible, contains a semiconductor material and a sealant, the container is heated to melt a material, a seed crystal is brought into contact with the material melt surface under the condition wherein the material is covered with the sealant, and the crystal is grown by pulling the seed crystal. As the second crucible, a crucible having a plurality of communicating holes is used, and the crystal is grown by pulling the seed crystal in the <110> direction.