EEPROM with etched tunneling window

摘要

A method forming a current path in a substrate ( 322 ) having a first conductivity type is disclosed. The method includes forming an impurity region ( 314 ) having a second conductivity type and extending from a face of the substrate to a first depth. A hole ( 305 ) is formed in the impurity region. A first dielectric layer ( 360 - 364 ) is formed on an inner surface of the hole. A first electrode ( 306 ) is formed in the hole adjacent the dielectric layer.