| 摘要 |
PROBLEM TO BE SOLVED: To reduce the resistance of a source contact, by forming a proper ohmic junction between a source electrode and a source region in a trench gate MISFET. SOLUTION: In a trench gate type MISFET, first injection for forming a first highly concentrated p-type source region 6 is carried out to deeply implant impurities, and then, second injection for forming a second highly concentrated p-type source region 8 is carried out to increase impurity concentration in the neighborhood of the top surface of a semiconductor region 14. This enables a gate electrode 5 and the first highly concentrated p-type source region 6 to be overlapped without fail, thus preventing off-set between the gate sources. Further, since an adequate ohmic junction can be formed between a silicide film 10 electrically connected to a source electrode film 12 and the second highly concentrated p-type source region 8, the resistance of a source contact can be decreased. Due to the synergistic effect by these two, it is possible to form a semiconductor device having resistance lower than that of a conventional one. COPYRIGHT: (C)2005,JPO&NCIPI
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