| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting element which has a p-type MgZnO semiconductor layer of high carrier concentration, and to provide its manufacturing method. <P>SOLUTION: In the light emitting element 1, a light emitting layer 24 has a double-hetero-structure which is formed by a p-type cladding layer 34 which consists of Mg<SB>x</SB>Zn<SB>1-x</SB>O (where 0≤x<1) layer, an active layer 33 which consists of Mg<SB>y</SB>Zn<SB>1-y</SB>O (where 0≤y<1), and an n-type cladding layer 32 which consists of Mg<SB>z</SB>Zn<SB>1-z</SB>O (where 0≤z<1). In the p-type cladding layer 34, C is doped. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
