| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a long wavelength band surface emission semiconductor laser that has a drastically large optical output and low consumption electric power while satisfying a single transverse mode condition. <P>SOLUTION: The surface emission semiconductor laser is formed by stacking on a substrate (11) a first reflection mirror (12) of a semiconductor multilayer film, a second reflection mirror (13) of an n-type semiconductor multuilayer film, an n-type spacer layer (14), an active layer (15), a p-type spacer layer (16), tunnel joints (17, 18) formed of a p-type semiconductor layer and an n-type semiconductor layer, a third reflection mirror (19) of an n-type semiconductor multilayer film, and a fourth reflection mirror (26) of a semiconductor multilayer film in sequence. The p-type semiconductor layer (17) forming the tunnel joint is made of an In<SB>x</SB>Ga<SB>1-x</SB>As material that is doped with carbon (C) or beryllium (Be), establishing an In-composition ratio of 0≤x≤0.53. The side wall of the active layer (15) has an embedding structure covered with a semi-insulating material (20). <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
