发明名称 |
Providing a charge dissipation structure for an electrostatically driven device |
摘要 |
In one embodiment, an electrode is disposed on a surface of a first portion of the dielectric, with the first portion and the electrode forming an electrode region of the device. A charge-dissipation structure is then formed by implanting ions into the electrode region and a second portion of the dielectric located outside of the electrode region. In another embodiment, a charge-dissipation structure is formed by implanting ions into the dielectric of a movable part of an electromechanical system. Advantageously, ion implantation can be performed without masking, lithography, or elevated temperatures; the electrical properties of the resulting charge dissipation structure can be controlled relatively easily; and portions of the charge dissipation structure are protected from oxidation and/or corrosion by the dielectric material.
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申请公布号 |
US2005196891(A1) |
申请公布日期 |
2005.09.08 |
申请号 |
US20050113782 |
申请日期 |
2005.04.25 |
申请人 |
ARNEY SUSANNE;GASPARYAN ARMAN;JIN SUNGHO;LOPEZ OMAR D.;SHEA HERBERT R. |
发明人 |
ARNEY SUSANNE;GASPARYAN ARMAN;JIN SUNGHO;LOPEZ OMAR D.;SHEA HERBERT R. |
分类号 |
G02B26/08;H01G4/06;H01G4/35;H01G5/019;H01G5/16;H01G7/06;H01L21/00;(IPC1-7):H01L21/00 |
主分类号 |
G02B26/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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