发明名称 Attenuation cell with an attenuation factor control device
摘要 Attenuation cell comprising first and second differential pairs of bipolar transistors. A gain control device applies a voltage VA-VB between the bases of both differential pairs and comprises a set of three diodes in which a current IA, a current IB and the sum IA+IB of both preceding currents flow, respectively. The two diodes seeing current IB and IA+IB generate a voltage, respectively VB and VC, and the difference between these two voltages is used to generate a value Iz used in a control loop. A desired value Vct is transformed into information Ix, then into information Iy proportional to absolute temperature T, and an error amplifier uses information Iy-Iz and generates currents IA and IB by minimizing this difference.
申请公布号 US2005195034(A1) 申请公布日期 2005.09.08
申请号 US20040025848 申请日期 2004.12.29
申请人 STMICROELECTRONICS S.A. 发明人 GRASSET JEAN-CHARLES;BOSSU FREDERIC
分类号 H03G1/04;H03G7/06;(IPC1-7):H03F3/45 主分类号 H03G1/04
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