| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor laminate that is useful for manufacturing a group III nitride semiconductor element whose surface is flat and whose crystallinity is excellent using a substrate that is easily processed and of low cost. <P>SOLUTION: The group III nitride semiconductor laminate is formed such that a buffer layer comprising a columniform crystal or island crystals 1, 2 and 3 of Al<SB>x</SB>Ga<SB>1-x</SB>N (0≤x≤1) is formed on the substrate where the surface of the substrate aperiodically has grooves of an average depth of 0.01 to 5μ, and a single crystal layer of Al<SB>x</SB>In<SB>y</SB>Ga<SB>1-x-y</SB>N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) is formed on the buffer layer. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
