| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for protecting a gate electrode from an underlying gate insulating film, and also to provide a corresponding transistor structure. SOLUTION: This method comprises the steps of forming a gate insulating film overlying a channel region; forming a first metal barrier overlying the gate insulating film, having a thickness smaller than 5 nanometer (nm); forming a second metal gate electrode overlying the first metal barrier, having a thickness of greater than 10 nm; and establishing a gate electrode work function responsive only to the second metal, wherein the second metal gate electrode can be one of the following materials: elementary metals, such as p+ poly, n+ poly, Ta, W, Re, RuO<SB>2</SB>, Pt, Ti, Hf, Zr, Cu, V, Ir, Ni, Mn, Co, NbO, Pd, Mo, TaSiN, and Nb, and binary metals, such as WN, TaN, and TiN. Further the first metal barrier can be a binary metal, such as TaN, TiN, or WN. COPYRIGHT: (C)2005,JPO&NCIPI
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