| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an erasing method of a NAND flash memory device capable of preventing the leakage current of a high voltage transistor by applying a negative voltage to the well of the high voltage transistor used as an X decoder, and correcting an eraser disturbance failure. <P>SOLUTION: In the NAND flash memory device which includes a number of cell blocks including many cell strings, and a number of X decoders constituted of many high voltage transistors to apply predetermined voltages to word lines in the cell block, when an erasing operation is performed to erase one of the cell blocks, leakage prevention voltages are applied to the wells of the high voltage transistors in many X decoders. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
