| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device of a trench gate structure which operates at high speed and is higher in reliability, and to provide its manufacturing method. SOLUTION: The semiconductor device includes a first conductive type first semiconductor layer 4; a second conductive type second semiconductor layer 6 which is formed on the first semiconductor layer and is different from a first conductive type; a first conductive type third semiconductor layer 8 selectively formed on the second semiconductor layer; a trench 12 which penetrates the third conductive layer and the second semiconductor layer and reaches the first semiconductor layer; a gate insulating film 14 formed along a side face and a bottom face within the trench; and a gate electrode 20 which is formed so that it may come into contact with the gate insulating film of the side face of the trench, and wherein a surface at an opposite side to a surface which comes into contact with the gate insulating film forms a void 24 extended to an opening side from a bottom of the trench, together with the gate insulating film at the bottom of the trench. COPYRIGHT: (C)2005,JPO&NCIPI
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