| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a fuse circuit capable of rewriting data using a fuse element while storing the data. SOLUTION: The semiconductor device comprises a first fuse circuit group 62 capable of electrical writing and being written with n-bits data, and a plurality of second fuse circuit groups 72 each having a first storage section capable of electrical writing and storing rewrite data of m-bits (m is equal to n divided by an integer), and a second storage section for storing the address of a bit to be rewritten in the first fuse circuit group. At the time of rewriting data written in the first fuse circuit group, the data to be rewritten is written in the first storage section of the second fuse circuit group, the data corresponding to the address for storing the data to be rewritten in the first fuse circuit group is written in the second storage section, and read out of the data written in the first fuse circuit group at that address is forbidden. COPYRIGHT: (C)2005,JPO&NCIPI
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