| 摘要 |
A method for locating a repair solution for a memory that includes a memory array comprising a plurality of rows and a plurality of columns, N redundant rows, and M redundant columns is described. Both N and M are integers, where N is greater than or equal to zero and M is greater than or equal to zero. The N redundant rows and the M redundant columns are collectively referred to as redundant lines. The method includes generating a first defect matrix representing defects in the memory array. Additionally, the method includes recursively, until either the repair solution is found or the redundant lines are consumed: selecting a first line represented in the defect matrix and having at least one defect; generating a second defect matrix by eliminating at least the defects in the first line from the first defect matrix; and determining if the repair solution is found.
|
