| 摘要 |
A semiconductor laser has a substrate, a laminate including at least an active layer, a ridge stripe portion on the laminate, a current blocking layer provided on lateral side surfaces of the ridge stripe portion and on an upper surface of the laminate on lateral sides of the ridge stripe portion, and a metal plating layer that covers an upper surface of the ridge stripe portion and the current blocking layer. The metal plating layer has a layer thickness that is larger on both lateral sides of the ridge stripe portion than above the ridge stripe portion by an amount approximately corresponding to a height of the ridge stripe portion so that the metal plating layer has a roughly flat upper surface.
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