发明名称 [PIXEL STRUCTURE AND MANUFACTURING METHOD THEREOF]
摘要 A pixel structure and fabricating method thereof is provided. The pixel structure includes a scan line, a data line, an active component, a plurality of transparent capacitance electrodes and a pixel electrode. First, an active component, a scan line and a data line are formed over a substrate, wherein the active component is electrically connected to the scan line and the data line. In addition, a plurality of transparent capacitance electrodes are formed over the substrate. Next, a pixel electrode is formed over the transparent capacitance electrode and electrically connected to the active component. Thus, the pixel electrode and the transparent capacitance electrodes constitute a multilayer pixel storage capacitor. Since the pixel storage capacitor is comprised of transparent material, and being a multilayer structure, the capacitance of the pixel storage capacitor and the aperture ratio of the pixel structure respectively are increased.
申请公布号 US2005190312(A1) 申请公布日期 2005.09.01
申请号 US20040709090 申请日期 2004.04.13
申请人 YANG CHIEN-SHENG 发明人 YANG CHIEN-SHENG
分类号 G02F1/1343;G02F1/1362;(IPC1-7):G02F1/134 主分类号 G02F1/1343
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