发明名称 |
Semiconductor light-emitting device with isolation trenches, and method of fabricating same |
摘要 |
According to the present invention, a light-emitting semiconductor device has light-emitting elements separated by isolation trenches, preferably on two sides of each light-emitting element. The device may be fabricated by forming a single band-shaped diffusion region, then forming trenches that divide the diffusion region into multiple regions, or by forming individual diffusion regions and then forming trenches between them. The trenches prevent overlap between adjacent light-emitting elements, regardless of their junction depth, enabling a high-density array to be fabricated while maintaining adequate junction depth.
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申请公布号 |
US2005189547(A1) |
申请公布日期 |
2005.09.01 |
申请号 |
US20050119805 |
申请日期 |
2005.05.03 |
申请人 |
TANINAKA MASUMI;FUJIWARA HIROYUKI;OZAWA SUSUMU;NOBORI MASAHARU |
发明人 |
TANINAKA MASUMI;FUJIWARA HIROYUKI;OZAWA SUSUMU;NOBORI MASAHARU |
分类号 |
H01L21/764;H01L21/76;H01L27/15;H01L33/08;H01L33/30;(IPC1-7):H01L21/00;H01L29/26;H01L31/12;H01L33/00 |
主分类号 |
H01L21/764 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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