METHOD FOR CLEANING TREATMENT CHAMBER IN SUBSTRATE TREATING APPARATUS AND METHOD FOR DETECTING ENDPOINT OF CLEANING

摘要

A method for cleaning a treatment chamber in a substrate treating apparatus for subjecting a substrate having a tungsten-based coating film to a plasma treatment, which comprises introducing a gas containing O2 into the treatment chamber after the plasma treatment without opening the chamber to the atmosphere, to thereby form the plasma of the gas and clean the treatment chamber.