发明名称 |
METHOD AND APPARATUS FOR APPLYING DIFFERENTIAL REMOVAL RATES TO A SURFACE OF A SUBSTRATE |
摘要 |
<p>A system for processing a wafer is provided. The system includes a chemical mechanical planarization (CMP) tool. The CMP tool includes a wafer carrier defined within a housing. A carrier film is affixed to the bottom surface and supports a wafer. A sensor embedded in the wafer carrier. The sensor is configured to induce an eddy current in the wafer to determine a proximity and a thickness of the wafer. A cluster of sensors external to the CMP tool is included. The cluster of sensors is in communication with the sensor embedded in the wafer carrier and substantially eliminates a distance sensitivity. The cluster of sensors provides an initial thickness of the wafer to allow for a calibration to be performed on the sensor embedded in the wafer carrier. The calibration offsets variables causing inaccuracies in the determination of the thickness of the wafer during CMP operation. A method and an apparatus are also provided.</p> |
申请公布号 |
EP1550152(A4) |
申请公布日期 |
2005.08.31 |
申请号 |
EP20030761990 |
申请日期 |
2003.06.23 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
GOTKIS, YEHIEL;KISTLER, RODNEY;OWCZARZ, ALEKSANDER;HEMKER, DAVID;BRIGHT, NICOLAS, J. |
分类号 |
B24B1/00;B24B37/013;B24B57/02;H01L21/00;H01L21/304;H01L21/306;H01L21/66;(IPC1-7):H01L21/302;B24B37/04 |
主分类号 |
B24B1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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