METHODS OF FABRICATING A SEMICONDUCTOR INTEGRATED CIRCUIT WITH THIN FILM TRANSISTORS USING A SELECTIVE EPITAXIAL GROWTH TECHNIQUE AND A PARTIAL PLANARIZATION TECHNIQUE AND SEMICONDUCTOR INTEGRATED CIRCUITS FABRICATED THEREBY
摘要
申请公布号
KR20050086350(A)
申请公布日期
2005.08.30
申请号
KR20040071886
申请日期
2004.09.08
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KWAK, KUN HO;JANG, JAE HOON;JUNG, SOON MOON;CHO, WON SEOK;LIM, HOON;KIM, SUNG JIN;HWANG, BYUNG JUN;KIM, JONG HYUK
