| 发明名称 |
Method for depositing silicon nitride films and silicon oxynitride films by chemical vapor deposition |
| 摘要 |
A method for producing silicon nitride and silicon oxynitride films by CVD technology, where even at lower temperatures, acceptable film-deposition rates are achieved, without the by-product production of large amounts of ammonium chloride.
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| 申请公布号 |
US6936548(B2) |
申请公布日期 |
2005.08.30 |
| 申请号 |
US20040497455 |
申请日期 |
2004.10.12 |
| 申请人 |
L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET, L'EXPLOITATION DES PROCEDES GEORGES CLAUDE |
发明人 |
DUSSARRAT CHRISTIAN;GIRARD JEAN-MARC |
| 分类号 |
C23C16/30;C23C16/34;C23C16/455;H01L21/318;(IPC1-7):H01L21/31 |
主分类号 |
C23C16/30 |
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