发明名称 |
Magnetic random access memory with stacked toggle memory cells |
摘要 |
A "toggling" type of magnetic random access memory (MRAM) has memory stacks arranged in the X-Y plane on the MRAM substrate with each memory stack having a plurality of toggle memory cells stacked along the Z axis. Each memory stack is located at an intersection region between two orthogonal write lines. Each cell in the stack is a "toggle" cell that has its synthetic antiferromagnet (SAF) free layer easy axis of magnetization aligned nonparallel with the X and Y axes and angularly spaced about the Z axis from the easy axes of magnetization of all the other SAF free layers in the stack. Each cell in a stack is magnetically separated from adjacent cells in the stack by a nonmagnetic separation layer. The magnetization direction of the free layer in a selected memory cell in a stack can be switched without switching the magnetization directions of the free layers in the other memory cells in the stack.
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申请公布号 |
US6937497(B1) |
申请公布日期 |
2005.08.30 |
申请号 |
US20040991993 |
申请日期 |
2004.11.18 |
申请人 |
MAGLABS, INC. |
发明人 |
JU KOCHAN;ALLEGRANZA OLETTA |
分类号 |
G11C11/15;G11C11/16;(IPC1-7):G11C11/15 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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