| 摘要 |
There is provided a semiconductor device including a semiconductor substrate and a conductive layer above the semiconductor substrate, wherein the conductive layer contains copper, a surface region of the conductive layer contains at least one of C-H bonds and C-C bonds, and a total amount of C atoms forming the C-H bonds and C atoms forming the C-C bonds in the surface region is 30 atomic % or more of a whole amount of elements in the surface region. |
