发明名称 |
STRAINED SILICON-ON-INSULATOR AND METHOD TO FORM THE SAME |
摘要 |
A method for fabricating a strained Si layer on insulator, a structure of the strained Si layer on insulator, and electronic systems comprising such layers are disclosed. The method comprises the steps of forming epitaxially a relaxed SiGe layer on top of a Si layer on insulator; transforming the crystalline Si layer and the lower portion of the crystalline relaxed SiGe layer into an amorphous material state by ion implantation; and re-crystallizing the amorphous material from the crystalline top portion of the SiGe layer. The larger lattice constant of the SiGe seed layer forces a tensile strain in the Si layer.
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申请公布号 |
KR20050083925(A) |
申请公布日期 |
2005.08.26 |
申请号 |
KR20057009099 |
申请日期 |
2005.05.19 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COHEN GUY M.;CHRISTIANSEN SILKE H. |
分类号 |
H01L21/20;H01L21/762;(IPC1-7):H01L21/20;H01L27/12 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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