DRAIN/SOURCE EXTENSION STRUCTURE OF A FIELD EFFECT TRANSISTOR INCLUDING DOPED HIGH-K SIDEWALL SPACERS

摘要

High-k dielectric spacer elements on the gate electrode of a field effects transistor in combination with an extension region that is formed by dopant diffusion from the high-k spacer elements into the underlying semiconductor region provides for an increased charge carrier density in the extension region. In this way, the limitation of the charge carrier density to approximately the solid solubility of dopants in the extension region may be overcome, thereby allowing extremely shallow extension regions without unduly compromising the transistor performance.