| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that has a large drain current as well as an optional electrical property by controlling the thickness of a semiconductor film in an appropriate range. SOLUTION: The semiconductor device is provided with a glass substrate 1 having a main surface 1a; a polysilicon film 7 that is formed on the main surface 1a with a channel area 11, and a source area 9 and a drain area 13 located on both sides of the channel area 11; a gate insulating film 17 that is formed in contact with the polysilicon film 7 and contains oxygen; and a gate electrode 21 that is formed facing the channel area 11 with the gate insulating film 17 in between. The polysilicon film 7 is >50 nm and≤150 nm in thickness. In addition, the polysilicon film 7 contains 0.5 atom% or more and 10 atom% or less. COPYRIGHT: (C)2005,JPO&NCIPI
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